MJD112 Datasheet, PDF (1/3 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
MJD112
DESCRIPTION
·High DC current gain
·Lead formed for surface mount applications(NO suffix)
·Straight lead(IPAK,“－I”suffix)
·Built-in a damper diode at E-C
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for general purpose amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
Ta=25℃
PC
Collector Power Dissipation
TC=25℃
TJ
Junction Temperature
4
A
1.75
W
20
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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