MJB42C Datasheet, PDF (1/2 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

isc Silicon PNP Power Transistor
INCHANGE Semiconductor
MJB42C
DESCRIPTION
·Lead formed for surface mount applications(NO suffix)
·Electrically the same as TIP42 series
·Pb-free package are available
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·General purpose amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-6
A
ICP
Collector Current-Pulse
-10
A
IB
Base Current
PC
Total Power Dissipation
@ Ta=25℃
PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-2
A
2
W
65
W
-65~150 ℃
Tstg
Storage Temperature Range
-65~150 ℃
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