MJ901 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
MJ901
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO=-80V(Min.)
·High DC Current Gain-
: h_FE= 1000(Min.)@I_C=-3A
·Low Collector Saturation Voltage-
: V_{CE (sat)}=-2.0V(Max.)@ I_C=-3A
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-80
V
V_CEO
Collector-Emitter Voltage
-80
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continunous
-8
A
I_BB
Base Current-Continunous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-0.1
A
90
W
200
℃
-55~+200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c}
Thermal Resistance, Junction to Case
1.94 ℃/W
isc Website：www.iscsemi.cn