MJ8505 Datasheet, PDF (1/2 Pages) America Semiconductor, LLC – NPN Silicon Power Transistors

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 800V(Min)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector- Base Voltage
1400
V
VCEO(SUS) Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
8
A
IBM
Base Current-Peak
12
A
PC
Collector Power Dissipation@TC=25℃ 175
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
isc Product Specification
MJ8505
isc website：www.iscsemi.com
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