MJ6308 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·700V Collector-Base Breakdown Capability
·Excellent Dynamic Saturation Characteristics
·Fast swithing
·Low Saturation Voltage
·Advanced Technology Replacement for the 2N6308
APPLICATIONS
·Designed in circuits requiring good dynamio saturation
characteristics in swithing power supply applications and
other inductive swithing circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CBO Collector-Base Voltage
700
V
V_CES Collector-Emitter Sustaining Voltage
380
V
V_EBO Emitter-Base Voltage
10
V
I_C
Collector Current-Continuous
8
A
I_BB
Base Current-Continuous
4
A
P_C
Collector Power Dissipation@T_C=25℃
140
W
T_J
Junction Temperature
200
℃
T_stg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R_{th j-c} Thermal Resistance,Junction to Case
1.25
℃/W
isc Product Specification
MJ6308
isc Website：www.iscsemi.cn