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| MJ450 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJ450
DESCRIPTION
·Low Saturation Voltage-
: VCE(sat) =-1V@IC=-10Adc
·DC Current Gain-
: hFE=20(Min)@ IC=-10A
APPLICATIONS
·Designed for high-current switching and general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-40
V
VCEO Collector-Emitter Voltage
-40
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-30
A
IBB
Base Current-Continuous
-5
A
PC
Collector Power Dissipation@TC=25â 150
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.17
UNIT
â/W
isc Websiteï¼www.iscsemi.cn
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