 English |
|
|
|
|
|
|
|
| MJ425 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
| |||
|
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Voltage-VCEX= 700V
·DC Current Gain-hFE=10(min)@ IC=2.5A
·Low Collector-Emitter Saturation Voltage-
VCE(sat)=0.8Vdc(max)@IC=1Adc
APPLICATIONS
·Designed for use in high voltage applications in deflection
circuits, swithing regulators, inverters, and tine operated
amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
700
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
IBB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25â
100
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature Range
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.75
â/W
isc Product Specification
MJ425
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese