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| MJ413 Datasheet, PDF (1/2 Pages) Motorola, Inc – 10 AMPERE POWER TRANSISTORS NPN SILICON | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ413
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 325V(Min.)
·DC Current Gain-
: hFE= 20-80@ IC= 0.5A
APPLICATIONS
·Designed for medium to high voltage inverters, converters,
regulators and switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
400
V
VCEX Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IBB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25â
125
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature Range
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0
â/W
isc Websiteï¼www.iscsemi.cn
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