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| MJ411 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 1A
APPLICATIONS
·Designed for medium to high voltage inverters, converters,
regulators and switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
300
V
VCEO Collector-Emitter Voltage
300
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IBB
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25â
100
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature Range
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
0.75
UNIT
â/W
isc Product Specification
MJ411
isc Websiteï¼www.iscsemi.cn
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