MJ4032 Datasheet, PDF (1/2 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
MJ4032
DESCRIPTION
·With TO-3 package
·Respectively complement to type MJ4035
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use as output devices in complementary general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_C=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-100
V
V_CEO Collector-Emitter Voltage
-100
V
V_EBO Emitter-Base Voltage
-5
V
I_C
Collector Current
-16
A
I_BB
Base Current
-0.5
A
P_C
Collector Power Dissipation@T_C=25℃ 150
W
T_J
Junction Temperature
200
℃
T_stg
Storage Temperature
-55~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX
1.17
UNIT
℃/W
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