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MJ4031 Datasheet, PDF (1/2 Pages) Seme LAB – Bipolar PNP Device in a Hermetically sealed TO3 | |||
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
MJ4031
DESCRIPTION
·With TO-3 package
·Respectively complement to type MJ4034
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use as output devices in complementary general
purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current
-16
A
IBB
Base Current
-0.5
A
PC
Collector Power Dissipation@TC=25â 150
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-55~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.17
UNIT
â/W
isc Websiteï¼www.iscsemi.cn
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