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| MJ3772 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Low Collector-Emitter Saturation Voltage-
Vce(sat)=0.8V(Max)@Ic=10A
·Low Leakage -
Icbo=1mA(max)@100V
·High Current-Gain-Bandwidth Product-
fT=2MHz(min)@Ic=1A
APPLICATIONS
·Designed for power amplifier and switching applications.
·For ultimate circuit performance based on the design
requirements.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Base Voltage
60
V
VEBO Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
20
A
IBB
Base Current-Continuous
5
A
PC
Collector Power Dissipation@TC=25â
200
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature Range
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.875
â/W
isc Product Specification
MJ3772
isc Websiteï¼www.iscsemi.cn
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