MJ3738 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
MJ3738
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -225V(Min)
·High Switching Speed
APPLICATIONS
·Designed for high voltage switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-250
V
VCEO
Collector-Emitter Voltage
-225
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.5
A
PD
Total Power Dissipation@TC=25℃
20
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
isc website：www.iscsemi.com
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