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| MJ3040 Datasheet, PDF (1/2 Pages) Motorola, Inc – DARLINGTON 10 AMPERE POWER TRANSISTORS NPN SILICON | |||
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
MJ3040
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 100 (Min) @ IC =2.5A
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)=300V(Min)
APPLICATIONS
·Developed for line operated amplifier, series pass and
Switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(TC=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
400
V
VCEO Collector-Emitter Voltage
300
V
VEBO Emitter-Base Voltage
8
V
IC
Collector Current -Continuous
10
A
PC
Collector Power Dissipation@TC=25â 175
W
TJ
Junction Temperature
Tstg
Storage Temperature
200
â
-55~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.0
UNIT
â/W
isc Websiteï¼www.iscsemi.cn
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