MJ2955A Datasheet, PDF (1/2 Pages) Savantic, Inc. – Silicon PNP Power Transistors

isc Silicon PNP Power Transistors
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-
: hFE=20-70@IC= -4A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1V(Max)@ IC= -4A
·Complement to Type 2N3055A
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS
·Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-7
V
IC
Collector Current-Continuous
-15
A
IB
Base Current
PC
Collector Power Dissipation
@TC=25℃
TJ
Junction Temperature
-7
A
115
W
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.52
UNIT
℃/W
INCHANGE Semiconductor
MJ2955A
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