|
MJ2501 Datasheet, PDF (1/2 Pages) ON Semiconductor – DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON | |||
|
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
MJ2501
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 1000 (Min) @ IC = -5A
·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -80V(Min)
·Complement to type MJ3001
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(TC=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80
V
VCEO Collector-Emitter Voltage
-80
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-10
A
IBB
Base Current
-0.2
A
PC
Collector Power Dissipation@TC=25â 150
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-55~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.17
UNIT
â/W
isc Websiteï¼www.iscsemi.cn
|
▷ |