MJ2500 Datasheet, PDF (1/2 Pages) Motorola, Inc – 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlingtion Power Transistor
MJ2500
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
h_FE = 1000 (Min) @ I_C = -5A
·Collector-Emitter Breakdown Voltage-
V_(BR)CEO= -60V(Min)
·Complement to type MJ3000
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T_C=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO Collector-Base Voltage
-60
V
V_CEO Collector-Emitter Voltage
-60
V
V_EBO Emitter-Base Voltage
-5
V
I_C
Collector Current -Continuous
-10
A
I_BB
Base Current
-0.2
A
P_C
Collector Power Dissipation@T_C=25℃ 150
W
T_J
Junction Temperature
200
℃
T_stg
Storage Temperature
-55~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX
1.17
UNIT
℃/W
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