MJ21195 Datasheet, PDF (1/2 Pages) ON Semiconductor – COMPLEMENTARY SILICON POWER TRANSISTORS

INCHANGE Semiconductor
Silicon PNP Power Transistor
DESCRIPTION
·Excellent Gain linearity
·High DC Current Gain-
: hFE= 25(min) @IC = -8A
·Total Harmonic Distortion characterized.
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·Complement to the NPN MJ21196
APPLICATIONS
·Designed for high power audio output, disk head positioners
and other linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-400
V
VCEO
Collector-Emitter Voltage
-250
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-16
A
IB
Base Current
-5
A
PD
Total Power Dissipation@TC=25℃
250
W
Tj
Junction Temperature
-65~200
℃
Tstg
Storage Temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
0.7
UNIT
℃/W
Product Specification
MJ21195
isc Website：www.iscsemi.com
isc & iscsemi is registered trademark