MJ16110 Datasheet, PDF (1/2 Pages) Motorola, Inc – POWER TRANSISTORS 15 AMPERES 400 VOLTS 175 AND 135 WATTS

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ16110
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 400V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for use in half bridge and full bridge off line
converters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
650
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Pulsed
20
A
IB
Base Current-Continuous
10
A
IBM
Base Current-Pulsed
15
A
PD
Total Power Dissipation
TC=25℃
TC=100℃
175
100
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C ThermalResistance Junction To Case
VALUE
0.92
UNIT
℃/W
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