MJ16018 Datasheet, PDF (1/3 Pages) Motorola, Inc – POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJ16018
DESCRIPTION
With TO-3 package
High voltage ,high speed
APPLICATIONS
Switching Regulators
Inverters
Solenoids
Relay Drivers
Motor Controls
Deflection Circuits
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current (DC)
I_CM
Collector current-Peak
I_B
Base current
I_BM
Base current-Peak
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
T_C=100
VALUE
1500
800
6
10
15
8
12
175
100
150
-55~150
UNIT
V
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance junction to case
VALUE
1.0
UNIT
/W