MJ15022 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTOR(16A,200-250V,250W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJ15022 MJ15024
DESCRIPTION
With TO-3 package
Complement to type MJ15023; MJ15025
Excellent safe operating area
High DC current gain
h_FE = 15 (Min) @ I_C = 8 Adc
APPLICATIONS
Designed for high power audio, disk head
positioners and other linear applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
MJ15022
MJ15024
V_CEO
MJ15022
Collector-emitter voltage
MJ15024
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_D
Total power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c}
Thermal resistance junction to case
VALUE
350
400
200
250
5
16
30
5
250
150
-65~200
UNIT
V
V
V
A
A
A
W
MAX
0.70
UNIT
/W