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| MJ15012 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon PNP Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-
: hFE= 20(Min.)@IC = -2A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.5V(Max)@ IC = -4A
·Complement to Type MJ15011
APPLICATIONS
·Designed for high power audio, disk head positioners , and
other linear applications. These devices can also be used
in power switching circuits such as relay or solenoid drivers,
DC-DC converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCEO(SUS) Collector-Emitter Voltage
-250
V
VCEX Collector-Emitter Voltage
-250
V
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
-15
A
IBB
Base Current-Continuous
-2
A
IBM
Base Current-Peak
-5
A
IE
Emitter Current-Continuous
12
A
IEM
Emitter Current-Peak
20
A
PD
Total Power Dissipation@TC=25â
200
W
Tj
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
0.875
UNIT
â/W
isc Product Specification
MJ15012
isc Websiteï¼www.iscsemi.cn
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