MJ13330 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 200V(Min)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
V_CEV Collector-Emitter Voltage
400
V
V_CEO Collector-Emitter Voltage
200
V
V_EBO Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
20
A
I_CM
Collector Current-Peak
30
A
I_BB
Base Current-Continuous
10
A
I_BM
Base Current-Peak
20
A
P_C
Collector Power Dissipation@T_C=25℃ 175
W
T_J
Junction Temperature
200
℃
T_stg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
isc Product Specification
MJ13330
isc Website：www.iscsemi.cn