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| MJ13090 Datasheet, PDF (1/2 Pages) Motorola, Inc – 15 AMPERE NPN SILICON POWER TRANSISTORS | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)âMJ13090
= 450V(Min)âMJ13091
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
MJ13090
650
VCEV Collector-Emitter Voltage
V
MJ13091
750
MJ13090
400
VCEO(SUS) Collector-Emitter Voltage
V
MJ13091
450
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
15
A
ICM
Collector Current-Peak
20
A
IBB
Base Current-Continuous
5
A
IBM
Base Current-Peak
10
A
PC
Collector Power Dissipation@TC=25â 175
W
TJ
Junction Temperature
200
â
Tstg
Storage Temperature
-65~200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.0
UNIT
â/W
isc Product Specification
MJ13090/13091
isc Websiteï¼www.iscsemi.cn
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