MJ13070 Datasheet, PDF (1/2 Pages) Motorola, Inc – NPN SILICON POWER TRANSISTORS

INCHANGE Semiconductor
isc Silicon NPN Power Transistors
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 400V(Min)—MJ13070
= 450V(Min)—MJ13071
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE UNIT
MJ13070
650
V_CEV Collector-Emitter Voltage
V
MJ13071
750
MJ13070
400
V_CEO(SUS) Collector-Emitter Voltage
V
MJ13071
450
V_EBO Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
5
A
I_CM
Collector Current-Peak
8
A
I_BB
Base Current-Continuous
2
A
I_BM
Base Current-Peak
4
A
P_C
Collector Power Dissipation@T_C=25℃ 125
W
T_J
Junction Temperature
200
℃
T_stg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
1.4
UNIT
℃/W
isc Product Specification
MJ13070/13071
isc Website：www.iscsemi.cn