MJ12021 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ12021
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 450V(Min)
·Fast Turn-Off Time
APPLICATIONS
·Designed for high resolution video systems, such as : high
density graphic displays, data terminals, video scanners.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CEV Collector-Emitter Voltage
850
V
V_CEO(SUS) Collector-Emitter Voltage
450
V
V_EBO Emitter-Base Voltage
6
V
I_C
Collector Current-Continuous
8
A
I_CM
Collector Current-Peak
16
A
I_BB
Base Current-Continuous
6
A
I_BM
Base Current-Peak
12
A
P_C
Collector Power Dissipation@T_C=25℃ 150
W
T_J
Junction Temperature
200
℃
T_stg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
1.17
UNIT
℃/W
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