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MJ12005 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor | |||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ12005
DESCRIPTION
· Collector-Emitter Voltage-
VCEX = 1500V
·Safe Operation Area
APPLICATIONS
·Designed for use in deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCEX Collector-Emitter Voltage
1500
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IBB
Base Current-Continuous
4
A
IE
Emitter Current-Continuous
12
A
PC
Collector Power Dissipation@TC=25â 100
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-65~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.25
UNIT
â/W
isc Websiteï¼www.iscsemi.cn
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