MJ12003 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ12003
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = 750V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for use in CRT deflection circuits.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CEX Collector-Emitter Voltage
1500
V
V_CEO(SUS) Collector-Emitter Voltage
750
V
V_EBO Emitter-Base Voltage
5
V
I_C
Collector Current-Continuous
4
A
I_BB
Base Current-Continuous
3
A
I_E
Emitter Current-Continuous
7
A
P_C
Collector Power Dissipation@T_C=25℃ 100
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
1.25
UNIT
℃/W
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