 English |
|
|
|
|
|
|
|
| MJ11031 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Darlington Power Transistor | |||
| |||
|
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
MJ11031
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -90V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= -25A
: hFE= 400(Min.)@IC= -50A
·Complement to Type MJ11030
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-90
V
VCEO
Collector-Emitter Voltage
-90
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continunous
-50
A
ICM
Collector Current-Peak
-100
A
IB
Base Current-Continunous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
-2
A
300
W
200
â
-55~+200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.584 â/W
isc Websiteï¼www.iscsemi.cn
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese