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| MJ11028 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTOR(50A,60-120V,300W) | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJ11028
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 60V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= 25A
: hFE= 400(Min.)@IC= 50A
·Complement to Type MJ11029
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continunous
50
A
ICM
Collector Current-Peak
100
A
IB
Base Current-Continunous
Collector Power Dissipation
PC
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
2
A
300
W
200
â
-55~+200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.584 â/W
isc Websiteï¼www.iscsemi.cn
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