MJ11022 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJ11022
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 250V (Min.)
·High DC Current Gain-
: h_FE= 400(Min.)@I_C= 10A
·Low Collector Saturation Voltage-
: V_{CE (sat)}= 1.0V(Max.)@ I_C= 5.0A
APPLICATIONS
·Designed for general purpose amplifiers, low frequency
switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
V_CBO
Collector-Base Voltage
250
V_CEO
Collector-Emitter Voltage
250
V_EBO
Emitter-Base Voltage
5
I_C
Collector Current-Continunous
15
I_CM
Collector Current-Peak
30
I_BB
Base Current-Continunous
0.5
Collector Power Dissipation
P_C
@T_C=25℃
175
T_j
Junction Temperature
175
T_stg
Storage Temperature Range
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
0.86 ℃/W
isc Website：www.iscsemi.cn