MJ11017 Datasheet, PDF (1/2 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,150-250V,175W)

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
MJ11017
DESCRIPTION
·High DC Current Gain-
: h_FE = 400(Min)@ I_C= -10A
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS) = -150V(Min)
·Low Collector-Emitter Saturation Voltage-
: V_CE(sat) = -2.0V(Max)@ I_C= -10A
= -3.4V(Max)@ I_C= -15A
·Complement to Type MJ11018
APPLICATIONS
·Designed for general purpose amplifiers ,low frequency
switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS(T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-150
V
V_CEO
Collector-Emitter Voltage
-150
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continuous
-15
A
I_CM
Collector Current-Peak
-30
A
I_B
Base Current- Continuous
P_C
Collector Power Dissipation
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-0.5
A
175
W
175
℃
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance,Junction to Case
MAX
0.86
UNIT
℃/W
isc Website：www.iscsemi.cn