MJ11013 Datasheet, PDF (1/2 Pages) ON Semiconductor – DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
MJ11013
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V_(BR)CEO= -90V(Min.)
·High DC Current Gain-
: h_FE= 1000(Min.)@I_C= -20A
·Low Collector Saturation Voltage-
: V_{CE (sat)}= -3.0V(Max.)@ I_C= -20A
·Complement to Type MJ11014
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
V_CBO
Collector-Base Voltage
-90
V
V_CEO
Collector-Emitter Voltage
-90
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current-Continunous
-30
A
I_CM
Collector Current-Peak
-50
A
I_B
Base Current-Continunous
Collector Power Dissipation
P_C
@T_C=25℃
T_j
Junction Temperature
T_stg
Storage Temperature Range
-1
A
200
W
200
℃
-65~+200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX UNIT
0.87 ℃/W
isc Website：www.iscsemi.cn