MJ10012T Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
MJ10012T
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 400V(Min)
·High Power Dissipation
·DARLINGTON
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Automotive ignition
·Switching regulator
·Motor control applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-peak
15
A
IB
Base Current
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
2
A
65
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Rresistance,Junction to Case
1.9
℃/W
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