MJ10012 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,400V,175W)

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJ10012
DESCRIPTION
With TO-3 package
High voltage,high current
DARLINGTON
APPLICATIONS
Automotive ignition
Switching regulator
Motor control applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Abolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
V_CBO
Collector-base voltage
V_CEO
Collector-emitter voltage
V_EBO
Emitter-base voltage
I_C
Collector current
I_CM
Collector current-peak
I_B
Base current
P_C
Collector power dissipation
T_j
Junction temperature
T_stg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
T_C=25
VALUE
600
400
8
10
15
2
175
150
-55~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-C}
Thermal resistance from junction to case
VALUE
1.0
UNIT
/W