MJ10003 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Darlington Power Transistor

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJ10003
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: V_CEO(SUS)= 400V (Min.)
·High Switching Speed
APPLICATIONS
Designed for high voltage, high speed , power switching in
Inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications as:
·Switching Regulators
·Inverters
·Solenoid and Relay Drivers
·Motor Controls
·Deflection Circuits
ABSOLUTE MAXIMUM RATINGS (T_a=25℃)
SYMBOL
PARAMETER
VALUE
V_CEO(SUS) Collector-Emitter Voltage
400
V_CEX(SUS) Collector-Emitter Voltage
450
V_CEV
Collector-Emitter Voltage
500
V_EBO
Emitter-Base Voltage
8
I_C
Collector Current-Continunous
10
I_CM
Collector Current-Peak
20
I_BB
Base Current-Continunous
2.5
Collector Power Dissipation
P_C
@T_C=25℃
150
T_j
Junction Temperature
200
T_stg
Storage Temperature Range
-65~200
UNIT
V
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-c} Thermal Resistance, Junction to Case
MAX
1.17
UNIT
℃/W
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