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| MJ1000 Datasheet, PDF (1/2 Pages) Motorola, Inc – Medium-Power Complementary Silicon Transistors | |||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
MJ1000
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= 3A
·Low Collector Saturation Voltage-
: VCE (sat)= 2.0V(Max.)@ IC= 3A
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25â)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continunous
10
A
IBB
Base Current-Continunous
PC
Collector Power Dissipation
@TC=25â
Tj
Junction Temperature
Tstg
Storage Temperature Range
0.1
A
90
W
200
â
-55~+200 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.94 â/W
isc Websiteï¼www.iscsemi.cn
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