English
Language : 

MCR100-8 Datasheet, PDF (1/1 Pages) SemiWell Semiconductor – Sensitive Gate Silicon Controlled Rectifiers
Thyristors
MCR100-8
‹ FEATURES
·With TO-92 package
·Sensitive gate trigger current
·Low reverse and forward blocking current
·Low holding current
‹ QUICK REFERENCE DATA
SYMBOL
PARAMETER
MIN UNIT
VDRM Repetitive peak off-state voltage
600
V
VRRM Repetitive peak off-state voltage
600
V
IT(AV) Average on-state current
1
A
PGM Peak gate power
0.1
W
PG(AV) Average gate power
0.01
W
ITSM
Non-repetitive peak on-state current
10
A
Tstg
Storage temperature range
-45-150 ℃
‹ LIMITING VALUES
Limiting values in accordance with the absolute maximum system(IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VDRM
VRRM
IRRM
IDRM
IGT
VTM
IH
VGT
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Repetitive peak reverse current
Repetitive peak off-state current
Gate trigger current
On-state voltage
Holding current
Gate trigger voltage
ID=0.1mA
ID=0.5mA
VRRM=600V
VDRM=600V
VD=6V; RL=100Ω
IT=1A
IT=0.1A ,IGT=12mA
VD=6V ; RL=100Ω
INCHANGE
MIN
MAX UNIT
600
V
600
V
10
μA
10
μA
10
120 μA
1.7
V
5
mA
0.4
0.8
V