MBRF30150CT Datasheet, PDF (1/2 Pages) Sangdest Microelectronic (Nanjing) Co., Ltd – SCHOTTKY RECTIFIER

INCHANGE Semiconductor
Schottky Barrier Rectifier
FEATURES
·Low power loss,high efficiency
·Low forward voltage drop
·High frequency operation
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·The MBRF30150CT is designed for use in high
frequency inverters,free wheeling and polarity protection
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM Peak Repetitive Reverse Voltage
150
V
VRWM Working Peak Reverse Voltage
150
V
VDC
Maximum DC Blocking Voltage
150
V
IF(AV)
Average Rectified Forward Current
Total device
30
A
Per leg
15
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave
260
A
superimposed on rated load conditions
TJ
Junction Temperature
-55~150
℃
IRRM
Peak Repetitive Reverse Surge Current
(2uS-1Khz)
1.0
A
Tstg
Storage Temperature Range
-55~150
℃
dv/dt Voltage Rate of Change (Rated V_R)
10,000 V/μs
Product Specification
MBRF30150CT
isc website：www.iscsemi.com
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