MBRF10L60CT Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Schottky Barrier Rectifier

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRF10L60CT
FEATURES
·Schottky barrier chip
·Low Power Loss,High Efficiency
·Guard ring for transient protection
·High Operating Junction Temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For use in high frequency rectifier of switching mode
power supplies,freewheeling diodes,DC-to-DC converters
or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
IF(AV)
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
Average Rectified Forward Current
60
V
10
A
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed on 200
A
rated load conditions
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-65~175 ℃
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