MBR780 Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Schottky Barrier Rectifier

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR780
FEATURES
·Schottky Barrier Chip
·Guard Ring Die Construction for Transient Protection
·Low Power Loss/High Efficiency
·High Surge Capability
·High Current Capability，Low Forward Voltage Drop
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low-voltage,high frequency inverters，free wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
80
V
56
V
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 125℃
7.5
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-50~150 ℃
Tstg
Storage Temperature Range
-50~150 ℃
isc website：www.iscsemi.com
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