MBR41H100CT Datasheet, PDF (1/2 Pages) ON Semiconductor – SWITCHMODE Power Rectifier 100V, 40A

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR41H100CT
FEATURES
·Low Forward Voltage
·Low Power Loss,High Efficiency
·High Surge Capability
·175℃ Operating Junction Temperature
·Pb-Free Package is Available
·Guard -Ring for Stress Protection
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR)TC= 150℃
100
V
20
A
Peak Repetitive Forward Current
IFRM
(Rated VR,Square Wave,20kHz)TC= 145℃
40
A
Peak Forward Surge Current, 8.3 ms single
IFSM
halfsine-wave superimposed on rated load 350
A
(JEDEC method)
TJ
Junction Temperature
-65~175 ℃
Tstg
Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated V_R)
10,000 V/μs
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