MBR40200PT Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Schottky Barrier Rectifier

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR40200PT
FEATURES
·Plastic material used carriers Unerwriter Laboratory
·Metal silicon rectifier, majonty carrier conduction
·Low Power Loss,High Efficiency
·Guard ring for transient protection
·High Surge Capability,High Current Capability
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For use in low voltage ,high frequency inverters,free wheeling and
polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM
VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltag
VALUE UNIT
200
V
140
V
IF(AV)
IFSM
IRRM
TJ
Tstg
dv/dt
Average Rectified Forward Current
40
A
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed 330
A
on rated load conditions
Peak Repetitive Reverse Surge Current
(20μs, 1.0kHz)
1.0
A
Junction Temperature
150
℃
Storage Temperature Range
-65~175 ℃
Voltage Rate of Change (Rated VR)
10,000 V/μs
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