MBR30H100CT Datasheet, PDF (1/2 Pages) Vishay Siliconix – High-Voltage Dual Schottky Rectifiers

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR30H100CT
FEATURES
·Low forward voltage
·Low power loss,high efficiency
·High surge capability
·175℃ operating junction temperature
·Pb-Free Package is Available
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
100
V
IF(AV)
Average Rectified Forward Current (Per Leg)
(Total)
15
30
A
Peak Forward Surge Current, 8.3 ms single
IFSM
halfsine-wave superimposed on rated load 250
A
(JEDEC method)
TJ
Junction Temperature
-65~175 ℃
Tstg
Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated V_R)
10,000 V/μs
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