MBR3060PT Datasheet, PDF (1/2 Pages) Inchange Semiconductor Company Limited – Schottky Barrier Rectifier

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR3060PT
FEATURES
·Low power loss,high efficiency
·High surge capability
·Metal silicon rectifier, majonty carrier conduction
·Guard ring for over voltage protection
·High Current Capability，low forward voltage drop
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For use in low voltage ,high frequency inverters,free wheeling and
polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
60
V
30
A
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed 200
A
on rated load conditions
IRRM
Peak Repetitive Reverse Surge Current
(2.0μs, 1.0kHz)
0.5
A
TJ
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~175 ℃
isc website：www.iscsemi.com
1 _{isc & iscsemi is registered trademark}