MBR3060 Datasheet, PDF (1/2 Pages) ON Semiconductor – Axial Lead Rectifier

INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR3060
FEATURES
·Dual diode construction;terminals 1 and 3 may be connected
for parallel operation at full rating
·Low forward voltage
·Guarding for stress protection
·150℃ operating junction temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: TO-3P package
·Mounting position: Any
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM Peak Repetitive Reverse Voltage
60
V
VRMS Maximum RMS Voltage
42
V
VDC
Maximum DC Blocking Voltage
60
V
IF(AV)
Average Rectified Forward Current (Per Leg)
(Total)
15
30
A
Peak Forward Surge Current, 8.3 ms single
IFSM
halfsine-wave superimposed on rated load
300
A
(JEDEC method)
TJ
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~150 ℃
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