MBR3045WT Datasheet, PDF (1/2 Pages) ON Semiconductor – SWITCHMODE Power Rectifier

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR3045WT
FEATURES
·Dual diode construction;terminals 1 and 3 may be connected
for parallel operation at full rating
·Low forward voltage
·Guarding for stress protection
·150℃ operating junction temperature
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
45
V
IF(AV)
Average Rectified Forward Current (Per Leg)
(Total)
15
30
A
Peak Forward Surge Current, 8.3 ms single
IFSM
halfsine-wave superimposed on rated load 200
A
(JEDEC method)
IRRM
Peak Repetitive Reverse Surge Current
(2.0μs, 1.0kHz)
2.0
A
TJ
Junction Temperature
-65~175 ℃
Tstg
Storage Temperature Range
-65~175 ℃
dv/dt Voltage Rate of Change (Rated V_R)
10,000 V/μs
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