 English |
|
|
|
|
|
|
|
| MBR3045PT Datasheet, PDF (1/1 Pages) ON Semiconductor – SWITCHMODE Power Rectifier | |||
| |||
|
INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR3045PT
FEATURES
·Dual Rectifier Conduction
·High Surge Capacity
·High Current Capability, Low Forward Voltage Drop
·Guarding for Overvoltage protection
APPLICATIONS
·For use in low voltage,high frequency inverters,free wheeling,
and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25â)
SYMBOL
PARAMETER
VALUE UNIT
VRRM Peak Repetitive Reverse Voltage
45
V
IF(AV)
Average Rectified Forward Current
TC= 100â
30
A
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave
200
A
superimposed on rated load conditions
TJ
Junction Temperature
-55~150 â
Tstg
Storage Temperature Range
-55~150 â
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
6.8
UNIT
â/W
ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Widthâ¤300μs,Duty Cycleâ¤2%)
SYMBOL
PARAMETER
CONDITIONS
VF
Maximum Instantaneous Forward Voltage
IR
Maximum Instantaneous Reverse Current
Note: Pulse test: 300μs pulse width, 1% duty cycle
IF= 15A ; TC= 125â
IF= 30A ; TC= 25â
IF= 30A ; TC= 125â
Rated DC blocking Voltage,TC= 25â
Rated DC blocking Voltage, TC= 125â
MAX
0.57
0.84
0.72
1.0
60
UNIT
V
mA
isc websiteï¼www.iscsemi.cn
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese