MBR3045CT Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – High Tjm Schottky Barrier Diodes

INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR3045CT
FEATURES
·Dual Rectifier Conduction, Positive Center Tap
·Low Power Loss/High Efficiency
·High Current Capability, Low Forward Voltage Drop
·High Surge Capacity
·Guarding for Overvoltage protection
·For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
MECHANICAL CHARACTERISTICS
·Case: Epoxy, Molded
·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
·High Temperature Soldering Guaranteed:
250℃ Max. for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM
VRMS
VR
Peak Repetitive Reverse Voltage
RMS Voltage
DC Blocking Voltage
45
V
IF(AV)
Average Rectified Forward Current (Per Leg)
(Total)
15
30
A
Nonrepetitive Peak Surge Current
IFSM
8.3ms single half sine-wave superimposed on
250
A
rated load conditions
IRRM
Peak Repetitive Reverse Surge Current (2μS
- 1Khz)
2
A
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
isc website：www.iscsemi.com
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