MBR30200CT Datasheet, PDF (1/2 Pages) Sirectifier Global Corp. – Power Schottky Rectifier - 30Amp 200Volt

Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR30200CT
FEATURES
·Plastic material used carriers Unerwriter Laboratory
·Metal silicon rectifier, majonty carrier conduction
·Low Power Loss,High Efficiency
·Guard ring for transient protection
·High Surge Capability,High Current Capability
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·For use in low voltage ,high frequency inverters,free
wheeling and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM
VRWM
VR
VR(RMS)
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltag
VALUE UNIT
200
V
140
V
IF(AV)
IFSM
TJ
Average Rectified Forward Current
30
A
Nonrepetitive Peak Surge Current
8.3ms single half sine-wave superimposed 150
A
on rated load conditions
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
dv/dt Voltage Rate of Change (Rated V_R)
10,000 V/μs
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